The International Symposium on Power Semiconductor Devices and ICs provides a forum for technical discussion in all areas of power semiconductor, power IC′s and their hybrid technologies and applications <b>Keywords:</b> Processes and Materials<br>Crystal Growth, Doping Technology, Lifetime Control, Passivation, Characterization, Si, GaAs, SiC, GaN and other III–N, Diamond<br>Semiconductor CAD/Simulation<br>Process, Device, & Circuit Simulation, Layout, Verification Tools<br>Device Performance and Reliability<br>Fast Switching, High Voltage, High Current, Wide SOA & Intelligent Power Devices, RF Power Devices, Integrated Power Devices, ESD Protection<br>High Voltage and Low Voltage Power ICs<br>Isolation Techniques, SOI, Circuit Design, Device Technology, Monolithic and Hybrid Integration<br>Modules and Packaging<br>Novel Techniques, Stress & Thermal Simulation, Thermal Management, High Voltage and Current Capability, High Power Dissipation, High Frequency & Low Inductance Packaging<br>Power Applications<br>Automotive Power Electronics, Telecommunications, Display, Audio, Lighting, Power Systems, Power Supply, Motor Control, Battery Management, Evaluation Methods, Power Management
Abbrevation
ISPSD
City
Santa Barbara
Country
United States
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