The International Conference on IC Design and Technology is the global forum for interaction and collaboration of IC design and technology for ″accelerating product time–to–market″. Close collaboration of the multi–discipline technical fields – design/device/process – accelerates the implementation of new designs and new technologies into manufacturing. <b>Keywords:</b> • Design approach including system, circuit and EDA (algorithm, CAD tool and methodology) to manage power, leakage, process variation, signal integrity, reliability, yield, and manufacturability. • Advanced VLSI design, including processors, ASICs, memories, analog and mixed–signal circuits that require close co–optimization of design and technology. • System–on–Chip (SoC), System–in–Package (SiP), and IP reuse for fast design closure. • All aspects of both design and technology regarding the challenges of advanced materials, advanced metallization, and 3D interconnection as both, novel interconnect scheme for future MPUs and approach for realization of SoCs. • Process and circuit technology for advanced memories: MRAM, FeRAM, PRAM, Nanocrystal Memory, and Flash with emphasis on circuit technology to work around the problem of recent memory development such as new process technology, new material, and new reliability issues. • Future molecular architecture including the Top–Down and Bottom–Up concept (SAM: Self Align Monolayer). Architecture and design for hybrid construction. • Advanced transistor structures for the devices of bulk, SOI, FinFET, Double Gate, FDSOI & PDSOI, SSOI, SiGe, … • Circuit & design style for very deep–submicron CMOS & advanced transistor structures. • New gate materials for adjusting Vt, enhanced mobility & scalability, low leakage, and low power. • SER, temperature, leakage, PID, reliability, yield, … effects on advanced transistor structures and circuits. • Simulation & modelling on advanced process, device & circuit. • Ultra thin gate dielectric (silicon dioxide, high–k, ...) degradation phenomena and their impact on the device or circuit reliability & performance, the testing methodology, bias temperature instability, models for the degradation phenomena and the reliability prediction. • Emerging IC technologies and circuits crossover such as organic IC′s, integrated sensors and integrated actuators.
Abbrevation
ICICDT
City
Austin
Country
United States
Deadline Paper
Start Date
End Date
Abstract