ICDS will continue to place its main focus on detailed understanding of electrical, optical, and structural properties of defects and impurities in semiconductors through novel experimental and theoretical methods. Such in depth understanding is crucially important for overcoming a variety of engineering problems associated with device processing and operation, particularly, for the realization of next generation nano electronics, optics, and spintronics. <b>Keywords:</b> Si, Ge, and diamond bulk single crystals, thin films, and devices<br>SiGe, SiC, SiGeC and other group IV–IV compound materials and devices<br>Si–based nanotechnology processing including gate oxides, high–k dielectrics contact metals, etc.<br>III–V, II–VI and other compound semiconductor bulk single crystals, thin films, and devices<br>Nitrides, oxides, and other wide gap materials and devices<br>GaMnAs and other materials and devices for spintronics<br>Low dimensional structures including surfaces, interfaces, superlattices, quantum wires, quantum dots, etc.<br>Fullerenes, carbon nanotubes, zeolites, chalcopyrites, organic, and molecular semiconductors<br>Semiconductors for quantum optics, quantum computation, and quantum communication<br>Semiconductors for photonic bands and for solar cells<br>Novel experimental and theoretical methods for improved understanding of defects in semiconductors in general
Abbrevation
ICDS
City
Albuquerque
Country
United States
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