The 2006 IEEE Bipolar / BiCMOS Circuits and Technology Meeting (BCTM2006) provides a forum for technical communication focused on the needs and interests of the bipolar and BiCMOS community. Papers covering the design, performance, fabrication, testing and application of bipolar and BiCMOS integrated circuits, bipolar phenomena, and discrete bipolar devices are solicited. BCTM2006 will be held in the European town of Maastricht, The Netherlands from October 8 – 10, 2006. This region of Holland is easily accessed by air via the Maastricht/Aachen airport, or from other well–known international hubs in the region, such as Brussels, Belgium (100km or 60miles away), Dusseldorf, Germany (also 100km or 60miles), or Amsterdam’s Schiphol airport (185km or 120 miles). <b>Keywords:</b> ANALOG/DIGITAL CIRCUIT DESIGN: Analog ICs – Digital ICs – Mixed analog/digital ICs – Novel design concepts and methods – DACs and ADCs – Amplifiers – Integrated filters – Communications ICs – Sensors – Gate arrays – Cell libraries – Voltage references – Analog subsystems within a VLSI chip – Packaging of high–performance ICs.<br>RADIO FREQUENCY CIRCUIT DESIGN: Low noise amplifiers – Automatic gain control – VCOs Active mixers – Active gyrators – Power amplifiers – Switches – Noise suppression techniques – Frequency synthesizers – Radio subsystems – Packaging of RF components – Designing with integrated passive components at RF frequencies – Optical networking ICs.<br>WIRELINE COMMUNICATIONS: LAN, WAN, FDDI, Ethernet, Metro, Fiber channel, SONET, ATM, ISDN, xDSL, optical data links – Power–line/phone–line networks – Cable modems, broadband circuits – MUX/DEMUX – Clock and data recovery – Error coding and correction – Crosspoint switches – Laser and modulator drivers – Preamplifiers – AGC amplifiers – Decision circuits – Equalizers.<br>DEVICE PHYSICS: New device physics phenomena in Si, SiGe, and III–V devices – Device design issues and scaling limits – Hot electron effects and reliability physics – Transport and high field phenomena – Noise – Linearity/Distortion – Novel measurement techniques – ESD phenomena.<br>MODELING/SIMULATION: Improved BJT and HBT models – Behavioral modeling techniques – Parameter extraction methods and test structures – RF and thermal simulation techniques – Modeling of passives, interconnect and packages – Statistical modeling – Device, process and circuit simulation.<br>PROCESS TECHNOLOGY: Advances in processes and device structures demonstrating high speed, low power, low noise, high current, high voltage, etc. – BiCMOS processes – Advanced process techniques – Si and Si–C homojunction bipolar/BiCMOS devices, III–V and SiGe heterojunction bipolar/BiCMOS devices – Fabrication of high–performance passive components including MEMs.<br>POWER DEVICES: Discrete and integrated bipolar/BiCMOS power devices, RF power devices, high–voltage ICs – Automotive electronics, disc drives, display drivers, power supplies, electric utility, medical electronics, motor controls, regulators, amplifiers, converters, aerospace electronics – BiCMOS circuits for power device control – CAD/modeling of power devices – Packaging of power devices.<br>
Abbrevation
BCTM
City
Maastricht
Country
Netherlands
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