The IEEE Electron Devices Society will sponsor the 32nd IEEE International SOI Conference 2 – 5 October, 2006 at the Holiday Inn Select in Niagara Falls, New York. The technical sessions will be preceded by a one–day Tutorial Short Course on 2 October. The purpose of the Conference is to provide a forum for open discussion in all areas of silicon–on–insulator technologies and their applications. Rump sessions on Wednesday evening will encourage attendees to share their opinions and technical expertise on the chosen topics. A material and equipment exhibition relating to SOI technology will be held concurrently with the Conference. A Best Paper Award will be presented at the conclusion of the Conference. <b>Keywords:</b> ♦ SOI MATERIAL SCIENCE/MODIFICATION, MATERIAL CHARACTERIZATION, AND MANUFACTURE<br>♦ SOI DEVICE PHYSICS AND MODELING<br>♦ SOI CIRCUIT APPLICATIONS (HIGH–PERFORMANCE MICROPROCESSORS, SRAMS, ASIC, LOW POWER, HIGH–VOLTAGE, RF, ANALOG, MIXED MODE, ETC.)<br>♦ DOUBLE GATE/VERTICAL CHANNEL STRUCTURES; OTHER NOVEL STRUCTURES<br>♦ NEW SOI STRUCTURES, CIRCUITS, AND APPLICATIONS (3D INTEGRATION, DISPLAYS, MICROACTUATORS– MEMS, MICROSENSORS, NOVEL MEMORIES, OPTICS, ETC.)<br>♦ SOI RELIABILITY ISSUES (HOT–CARRIER EFFECTS, RADIATION EFFECTS, HIGHTEMPERATURE EFFECTS, ETC.)<br>♦ MANUFACTURABILITY AND PROCESS INTEGRATION OF SOI DEVICES AND CIRCUITS<br>♦ ALTERNATE SILICON–ON–INSULATOR MATERIAL (STRAINED SOI, ETC.)<br>
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SOI
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New YorkNY
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United States
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