Abbrevation
ELT
City
San Jose
Country
United States
Deadline Paper
Start Date
End Date
Abstract

Continued scaling for cost effective semiconductor manufacturing beyond a 32&#8211;nm half&#8211;pitch will require a creative leap beyond what is practiced today&#046; Identification and exploration of new imaging techniques can take more than 10 years, so continued development of novel patterning techniques is necessary to maintain the development cycle runway&#046; While the barrier is high for mainstream introduction, niche applications are opening up as potential entry points for new technologies&#046; These alternative markets may emerge to give these novel technologies an opportunity to mature and build the critical infrastructure necessary for the successful introduction of a new lithography platform&#046; If successful, all markets would benefit from an improvement in technological capability and contained manufacturing costs&#046; This conference emphasizes lithography techniques that use either high&#8211;energy radiation (e&#046;g&#046;, extreme ultraviolet, x&#8211;rays, electron&#8211; and ion&#8211;beams) imaging, direct&#8211;write (maskless) techniques, imprint approaches, or other novel lithography methods for producing fine features&#046; Technical and scientific papers related to advanced lithographic technologies that push beyond the scope of the state&#8211;of&#8211;the&#8211;art in industry are solicited&#046; <b>Keywords:</b> Lithographic Imaging Systems and Radiation Sources<br>optical lithography at extended UV (shorter than 157&#8211;nm)<br>extreme&#8211;ultraviolet lithography (EUV) based on reflective optics<br>proximity x&#8211;ray lithography<br>e&#8211;beam technology (e&#046;g&#046;, projection, direct&#8211;write, multi&#8211;beam, multi&#8211;column, and mask making)<br>ion&#8211;beam lithography (projection, focused beam, and mask making)&#046;<br>Novel Printing Techniques and Methods<br>nano&#8211;imprint lithography<br>interferometric and holographic lithography<br>near&#8211;field/evanescent lithography<br>drop&#8211;on&#8211;demand nano&#8211;inkjet lithography&#046;<br>Maskless Lithography<br>large&#8211;area imaging methods<br>scanning array lithography<br>radiation assisted &#8243;in&#8211;situ&#8243; lithography<br>self&#8211;assembly of devices&#046;<br>Support Technologies and Processing<br>resist technology for sub&#8211;50&#8211;nm lithography (e&#046;g&#046;, for CD control, process latitude, new materials, and line&#8211;edge roughness)<br>masks for newly emerging lithographic technologies<br>metrology to characterize and control the imaging system<br>advanced lithography modeling and simulation<br>alignment principles and systems<br>systems and processes characterization&#046;<br>Applications for Advanced Lithographic Technologies<br>semiconductor micro&#8211; and nano&#8211;electronics<br>micro&#8211; and nano&#8211;fabrication processes and devices<br>displays<br>data storage<br>optoelectronics, LEDs, and photonics&#046;<br>