The success of the semiconductor industry has been driven by the relentless pursuit of technological innovations. One key technological innovation is the incredible ability of optical lithography to continuously shrink device features to improve performance and simultaneously reduce manufacturing costs. The development of high–performance resists, as a cross–cutting technology, has been a crucial enabler for lithography at all device generations. The limits of optical lithography have been extended, in no small part, by innovative resist materials and processes that provide high–resolution, robust process latitude, cost–effective technologies for mass production of the current generations of devices and prototype integration of devices at 65–nm and 45–nm nodes and below. To continue the historical pace of progress in lithography, new innovation, both evolutionary and revolutionary, in resist materials and processes is needed to fuel the continuous, healthy growth of the semiconductor industry. The SPIE Resist Conference aims to provide a forum for practitioners of resists around the world to exchange the latest advances in resist materials and processing technology. This conference welcomes submissions of original papers that emphasize recent advances in high–performance resist materials in established, maturing, emerging, and new lithographic technologies. The subjects of interest include resist design, synthesis and performance, resist processing techniques and engineering, structure–property relationships, and process modeling and simulation. Of particular interest are papers that correlate basic material properties with lithographic performance, such as sensitivity, resolution, process latitude, etch resistance, line edge roughness, and device integration. In addition, new and novel applications of resists in nontraditional imaging areas will also be included. In particular, this year′s conference will welcome papers addressing the unique chemical and material aspects of resists, topcoats, and high–refractive–index fluids aimed for immersion lithography. This conference is recognized as the leading forum for the presentation and discussion of research on the chemistry, physics, and performance of resist materials and related processes. Consistent with the conference′s charter and goals, authors are required to provide a description of the chemical and physical principles investigated as well as chemical structures of the resist materials. Papers which do not reveal sufficient chemical details so as to add value to the readers or are of commercial nature will not be accepted for presentation and publication. <b>Keywords:</b> resists and processes for the established 436–nm, 365–nm, and 248–nm lithography<br>resists and processes for the maturing193–nm lithography<br>resists and processes for immersion lithography<br>resists and processes for emerging sub–100–nm, EUV, and x–ray lithography<br>resists and processes for low– and high–voltage electron–beam lithography<br>topcoat and high–refractive–index materials and processes for immersion lithography<br>materials and processes for single, multilayer, and TSI resists<br>fundamental and mechanistic studies of resist materials<br>chemistry, physics, and photophysics of resist materials and processing<br>chemistry and physics of antireflection layer materials and processing<br>modeling and simulation of resist chemistry and processing<br>novel resist material approaches and processing techniques.<br>resist materials and processing of MEMS structures<br>resist materials and processing for imprint lithography<br>resist materials and processing of photo–imageable waveguides<br>resist technologies applied to optoelectronic and photonic applications<br>resist technologies applied to biological and life sciences<br>resist technologies in other nontraditional lithographic applications.<br>
Abbrevation
ARMPT
City
San Jose
Country
United States
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