The International Integrated Reliability Workshop focuses on ensuring semiconductor reliability through fabrication, design, testing, characterization, and simulation, as well as identification of the defects and physical mechanisms responsible for reliability problems. Through tutorials, discussion groups, special interest groups, and the informal format of the technical program, a unique environment is provided for understanding, developing, and sharing reliability technology for present and future semiconductor applications as well as ample opportunity for discussions and interactions with colleagues. Hot reliability topics for the workshop include: high–ê and nitrided SiO2 gate dielectrics, NBTI, Cu interconnects and low–ê dielectrics, product reliability and burn–in strategy, impact of transistor degradation on circuit reliability, reliability modeling and simulation, SiGe and strained Si, III–V, SOI, optoelectronics, single event upsets, and reliability assessment of novel devices and future “nano”–technologies. <b>Keywords:</b> Designing–in reliability (products, circuits, systems, processes)<br>Identification and characterization of reliability effects<br>Customer product reliability requirements / manufacturer reliability tasks<br>Deep sub–micron transistor and circuit reliability<br>Root cause defects, physical mechanisms, and simulations<br>Wafer level reliability tests, test approaches, and reliability test structures<br>
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IRW
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Fallen Leaf Lake
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United States
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