The International Workshop on Nitride Semiconductors in 2006 (IWN2006) will be held in the Kyoto area of Japan from October 22nd through the 27th. This will be the fourth in a series of workshops following those held previously in Nagoya, Japan (IWN2000); Aachen, Germany (IWN2002); and Pittsburgh, USA (IWN2004). IWN2006 is organized as a unified meeting joining together four independent topical workshops. The objective is to provide a stimulating forum for discussion of the latest advancements in research and development of nitride semiconductors and related materials and devices. The main emphasis of IWN2006 is to facilitate in–depth technical and scientific discussions through stimulating and creative debates focused on specific issues in a true workshop environment. This workshop will cover all aspects of nitride semiconductors and related materials ranging from fundamental science to application technology, and from material preparation to device performance. Abstract submissions related to these particular issues are especially encouraged. <b>Keywords:</b> Growth<br>Bulk growth and epitaxy issues, doping and impurities, low–dimensional structures; BN, AlN, GaN, InN, and related alloys; non–polar growth of GaN, and low dislocation density substrates Organizers: A. Usui (Furukawa Co. Ltd., Japan) T. Matsuoka (Tohoku Univ., Japan)<br>Optoelectronic Properties<br>Optical processes in low–dimensional structures, polar– and non–polar–oriented active layers; conductivity control in InN, AlN, and related alloys; current status of nitride–based dilute–magnetic semiconductors and III–V–N Organizer: Y. Kawakami (Kyoto Univ., Japan)<br>Optical Devices<br>Visible LEDs, white LEDs, UV–LEDs, LDs, VCSELs, photo detectors, solar cells, processing techniques, contacts, reliability, and non–polar– and semi–polar active layers Organizer: T. Miyajima (Sony Corp., Japan) Electron Devices<br>Device performance and characterization (transistors, amplifiers, MMICs, etc.), applications, novel device concepts, transport properties, processing techniques, contacts, heterostructure– and interface/surface physics, reliability, and AlN/GaN/InN–based devices for power electronics Organizer: K. Shiojima (Univ. Fukui, Japan)<br>
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IWN
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Kyoto
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Japan
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