The 7th International Workshop on Junction Technology (IWJT2007) will be held on June 8 – 9, 2007 in Kyoto, Japan. The IWJT, started in 2000 and was held annually in Japan or China, is an open forum focused on the needs and interest of the community of a junction formation technology in semiconductors. At the past IWJTs, a number of eminent and experienced scientists and engineers from Asia, America, and Europe presented their latest results on junction technology. The workshop will provide a good opportunity for researchers and engineers to present their new research results, and exchange ideas with leading scientists in this field.<br><b>Keywords:</b> Doping Technology ––– Ion implantation, plasma doping, gas and solid doping<br>Annealing Technology ––– Rapid thermal process, laser annealing, flash annealing, SPE, lattice damage and defects<br>Junction Technology for Novel CMOS Device Structures ––– Junction for SOI, strained Si, SiGe, Ge, and Schottky barrier S/D MOSFET<br>Silicide and Contact Technology for CMOS ––– Silicide materials and salicide technology, elevated S/D, low barrier contact, surface pre–treatment<br>Characterization for Shallow Junction ––– Physical and electrical characterization of ultra–shallow junction<br>Modeling and Simulation ––– Modeling and simulation of ultra–shallow junction formation of CMOS<br>Equipment, Materials and Substrates for Junction Technology<br>
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IWJT
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Kyoto
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Japan
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