The 3rd International Symposium on Advanced Gate Stack Technology provides an opportunity for close interaction with the leading experts while discussing the current technical challenges for the high–k/metal gate stack implementation in 32nm technology node and beyond.<br>The purpose of the symposium is to build an enhanced consensus on the strategy towards gate stack solutions for 32nm technology node and beyond.<br><b>Keywords:</b> High–k dielectrics on Si<br>High–k dielectrics on non–Si channel (Ge, III–V)<br>Surface pre–treatment for high–k dielectrics and interfaces<br>Higher–k dielectric materials for future scaling<br>Physics and chemistry of high–k and their interfaces defects<br>High–k dielectric reliability and breakdown<br>High–k device stability<br>Process–induced damage on high–k dielectric<br>Metal gate electrodes<br>Interaction between metal electrode and high–k dielectric<br>Vt roll–off for thin high–k dielectric<br>Integration of high–k/metal gate devices<br>
Abbrevation
ISAGST
City
Austin
Country
United States
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