Symposium on VLSI Technology, Systems, and Applications, Hsinchu, Taiwan

Abbrevation

VLSI-TSA

Link

http://vlsitsa.itri.org.tw/2007/General/

City

Hsinchu

Country

Taiwan

Deadline Paper

2006-10-15

Start Date

2007-04-23

End Date

2007-04-25

Abstract

With its Hsinchu Science–based Industrial Park generating over 70% of the global semiconductor foundry revenue, 20% of the world DRAM modules, 30% of fabless revenue, and 37% of independent IC packaging revenue, Taiwan is doubtlessly one of the major dynamos of the semiconductor industry on this planet. Join us at the VLSI–TSA technical programs as well as the technical and culture tours and experience the most vital and vibrant science park at the heart of world’s semiconductor and information industry. The conference is proud to create a platform for technical exchanges and communications shared by experts from all over the world. The 2007 International Symposium on VLSI Technology, Systems, and Applications (2007 VLSI–TSA), organized by the Industrial Technology Research Institute of Taiwan, will take place in Hsinchu, Taiwan on April 23–25, 2007. The purpose of the Symposium is to bring together scientists and engineers actively engaged in research, development, and manufacturing on VLSI technology, systems, and applications to discuss current progress in this field. Original and unpublished papers are solicited. The 2006 VLSI–TSA has successfully attracted over 550 attendees with a very high–quality program featuring 3 keynote speeches, over 55 technical papers including 15 invited talks, and 3 short courses on hot topics. Starting 2006, the VLSI–TSA split its design segment to become the International Symposium on VLSI Design, Automation, and Test (VLSI–DAT), while the VLSI–TSA Symposium will become an annual event and will extend its scope to include research advancement in the field of semiconductor manufacturing. For details about 2006 VLSI–DAT, please visit the website at http://vlsidat.itri.org.tw. Keywords: CMOS, SiGe bipolar, and BiCMOS ICs DRAM, SRAM and non–volatile memory Merged logic and memory SOI material and devices Device and interconnect reliability Process and device modeling Advanced lithography technologies TFT technology Advanced packaging technology Advanced process technology Interconnect technology High–k and low–k materials Emerging transistor structures Nanoelectronic devices/technology Organic electronics and photonics Novel device concept Yield enhancement Process control