International Conference on Simulation of Semiconductor Devices and Processes, Vienna, Österreich

The 12th International Conference on Simulation of Semiconductor Devices and Processes (SISPAD) will be held in September 2007 at the TU Wien, Vienna, Austria&#046; Following the tradition of the SISPAD conference series as the leading forum for Technology for Computer&#8211;Aided Design (TCAD), this conference provides an opportunity for the presentation and discussion of recent advances in modeling and simulation of semiconductor devices, processes and equipment&#046; The scientific program consists of invited and contributed presentations and a poster session&#046; <b>Keywords:</b> Device simulation, including transport in nano&#8211;structures<br>Models of VLSI device scaling limits, quantum effects,and novel devices<br>Process simulation, including both continuum and atomistic approaches<br>Equipment, topography, and lithography simulation<br>Interconnect modeling and algorithms including noise and parasitic effects<br>Compact device modeling for circuit simulation<br>Integration of circuit and device simulation<br>User interfaces and visualization<br>High performance computing, numerical methods and algorithms<br>Mesh generation and adaptation<br>Simulation of such devices as microsensor and optoelectronics devices<br>Benchmarking, calibration, and verification of simulators<br>