This 8th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2008) continues to be the only conference devoted to Si–based devices, passives, integrated circuits, and applications for high–frequency systems. Over three days, papers and sessions will highlight the significant technological advances of this dynamic field, as well as provide a unique forum for the presentation of new ideas and candid exchange on the emerging challenges and opportunities. Invited tutorial talks from international experts will be presented in key topical areas. SiRF is part of the IEEE Radio and Wireless Week (RWW), which also includes Radio and Wireless Symposium (RWS) and the Power Amplifier Symposium (PAS). <b>Keywords:</b> • Materials: epitaxial growth, strain engineering, characterization methods, stability issues, defectsv<br>• Devices: physics, optimization, and scaling limits of SiGe HBTs, RF–CMOS, SOI CMOS, strained–Si CMOS, SiGe MOSFETs, Si–based MODFETs, diodes that are applicable to RF, microwave, and millimeter–wave circuits and systems<br>• IC Technologies: novel device structures, SiGe HBT and CMOS integration issues, heterogeneously integrated devices and circuits, interconnects, fabrication on high–resistivity Si and SOI, packaging issues<br>• Circuits: RF, microwave, and mm–wave building blocks (LNA, mixer, VCO, PA, switches, filters), integrated transceivers, high–speed DAC and ADC, integrated transponders, analog/mixed–signal circuit blocks<br>• Passives: inductors, capacitors, thin film resistors, transmission lines, integrated antennae, transformers<br>• MEMS: RF MEMS, micro–machining for improved passives, integration with Si–based circuits and systems, FBARs<br>• Reliability Issues: yield and reliability concerns in high–frequency Si–based devices, passives and circuits, digital/RF circuit integration challenges, signal isolation issues, interference, substrate noise, RF impedance mismatch robustness, cooling architecture for devices and circuits<br>• Measurement and Modeling: compact modeling of Si–based transistors, robust measurement and de–embedding techniques, methods of built–in–self–test and built–in–self–calibration, models to correlate high–frequency parameters with easy–to–measure DC/AC parameters<br>• Applications: system–on–a–chip (SoC) and system–in–a–package (SiP) solutions utilizing the low–cost and high–level integration advantages of Si technology for RF, microwave, and mm–wave sub–systems and systems, integration of Si–based photonic elements with electronic circuits<br>• Emerging Technologies: Nano, quantum, optical, and THz technology devices and circuits<br>
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SiRF
City
Orlando
Country
United States
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