<FONT face=Arial><STRONG>The 8<SUP>th</SUP> International Workshop on Junction Technology</STRONG> (IWJT2008) will be held on <B><FONT color=#ff0000><U>May 15 – 16, 2008 in Shanghai, China</U></FONT></B>. The IWJT, started in 2000 and was held annually in Japan or China, is an open forum focused on the needs and interest of the community of a junction formation technology in semiconductors. At the past IWJTs, a number of eminent and experienced scientists and engineers from Asia, America, and Europe presented their latest results on junction technology. The workshop will provide a good opportunity for researchers and engineers to present their new research results, and exchange ideas with leading scientists in this field.</FONT><B>Keywords:</B> Doping Technology ––– Ion implantation, plasma doping, gas and solid doping<BR>Annealing Technology ––– Rapid thermal process, laser annealing, flash annealing, SPE, lattice damage and defects<BR>Junction Technology for Novel CMOS Device Structures ––– Junction for SOI, strained Si, SiGe, Ge, and Schottky barrier S/D MOSFET<BR>Silicide and Contact Technology for CMOS ––– Silicide materials and salicide technology, elevated S/D, low barrier contact, surface pre–treatment<BR>Characterization for Shallow Junction ––– Physical and electrical characterization of ultra–shallow junction <BR>Modeling and Simulation ––– Modeling and simulation of ultra–shallow junction formation of CMOS<BR>Equipment, Materials and Substrates for Junction Technology <BR>
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IWJT
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Shanghai
Country
China
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