Abbrevation
BCTM
City
Monterey
Country
United States
Deadline Paper
Start Date
End Date
Abstract

<B>Keywords:</B> ANALOG/DIGITAL CIRCUIT DESIGN: Analog ICs &#8211; Digital ICs &#8211; Mixed analog/digital ICs &#8211; Novel design concepts and methods &#8211; DACs and ADCs &#8211; Amplifiers &#8211; Integrated filters &#8211; Communications ICs &#8211; Sensors &#8211; Gate arrays &#8211; Cell libraries &#8211; Voltage references &#8211; Analog subsystems within a VLSI chip &#8211; Packaging of high&#8211;performance ICs&#046;<BR>RADIO FREQUENCY CIRCUIT DESIGN: Low noise amplifiers &#8211; Automatic gain control &#8211; VCOs Active mixers &#8211; Active gyrators &#8211; Power amplifiers &#8211; Switches &#8211; Noise suppression techniques &#8211; Frequency synthesizers &#8211; Radio subsystems &#8211; Packaging of RF components &#8211; Designing with integrated passive components at RF frequencies – Optical networking ICs&#046;<BR>WIRELINE COMMUNICATIONS: LAN, WAN, FDDI, Ethernet, Metro, Fiber channel, SONET, ATM, ISDN, xDSL, optical data links &#8211; Power&#8211;line/phone&#8211;line networks &#8211; Cable modems, broadband circuits &#8211; MUX/DEMUX – Clock and data recovery &#8211; Error coding and correction &#8211; Crosspoint switches &#8211; Laser and modulator drivers &#8211; Preamplifiers &#8211; AGC amplifiers &#8211; Decision circuits &#8211; Equalizers&#046;<BR>DEVICE PHYSICS: New device physics phenomena in Si, SiGe, and III&#8211;V devices &#8211; Device design issues and scaling limits &#8211; Hot electron effects and reliability physics &#8211; Transport and high field phenomena &#8211; Noise &#8211; Linearity/Distortion &#8211; Novel measurement techniques &#8211; ESD phenomena&#046;<BR>MODELING/SIMULATION: Improved BJT and HBT models &#8211; Behavioral modeling techniques &#8211; Parameter extraction methods and test structures &#8211; RF and thermal simulation techniques &#8211; Modeling of passives, interconnect and packages &#8211; Statistical modeling &#8211; Device, process and circuit simulation&#046;<BR>PROCESS TECHNOLOGY: Advances in processes and device structures demonstrating high speed, low power, low noise, high current, high voltage, etc&#046; &#8211; BiCMOS processes &#8211; Advanced process techniques – Si and Si&#8211;C homojunction bipolar/BiCMOS devices, III&#8211;V and SiGe heterojunction bipolar/BiCMOS devices &#8211; Fabrication of high&#8211;performance passive components including MEMs&#046;<BR>POWER DEVICES: Discrete and integrated bipolar/BiCMOS power devices, RF power devices, high&#8211;voltage ICs &#8211; Automotive electronics, disc drives, display drivers, power supplies, electric utility, medical electronics, motor controls, regulators, amplifiers, converters, aerospace electronics &#8211; BiCMOS circuits for power device control – CAD/modeling of power devices &#8211; Packaging of power devices&#046;<BR>