The 2008 International Workshop on “Dielectric Thin Films for Future ULSI Devices: Science and Technology” (IWDTF–08) will be held at Tokyo Institute of Technology, Meguro–ku, Tokyo, Japan, on November 5–7, 2008. The IWDTF started in 1999, based on a domestic annual workshop on ultrathin silicon dioxide films. In succession to the second (IWDTF–04, Tokyo) and the third (IWDTF–06, Kawasaki) workshops, the IWDTF–08 will focus on the science and technologies of gate dielectric films for MOS devices, such as ultrathin SiO<SUB>2</SUB>, SiON, high–k gate dielectrics, and ferroelectric films. The topics on other technologies involved in the advanced gate stacks, which include metal gate electrodes and high–mobility channel materials, will also be discussed. The IWDTF will provide a great opportunity for information exchange and discussions at forefront of the researches on future ULSI. The papers on both experimental and theoretical studies, for the deep understanding of the properties of gate dielectric films and their interfaces, are welcomed. The workshop will consist of invited and contributed talks, and poster presentations. Selected topics of current interests will be reviewed by several invited talks.<BR><B>Keywords:</B> <LI>Ultrathin silicon dioxide, oxynitride and oxide–nitride composite dielectrics <LI>High–k gate dielectrics <LI>Metal gate electrodes <LI>Mobility enhancement technology <LI>Ferroelectric and high–k films for memory applications <LI>Growth and related process of gate dielectric films <LI>Electrical characterization of gate dielectrics <LI>Gate dielectric wearout and reliability <LI>Characterization and control of gate dielectric/Si interface <LI>Surface preparation and cleaning issues for gate dielectrics <LI>Dielectric reliability related to process integration <LI>Theoretical approaches to gate dielectrics/Si structure </LI>
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IWDTF
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Tokyo
Country
Japan
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