<P>The International Conference on IC Design and Technology is the global forum for interaction and collaboration of IC design and technology for ″accelerating product time–to–market″. Close collaboration of the multi–discipline technical fields – design/device/process – accelerates the implementation of new designs and new technologies into manufacturing. </P> <P><B>Keywords:</B> <SPAN class=Text><B><B></P> <LI>Design/device/process optimizations and trade–off for leakage current, power consumption, & noise issues in mixed–signals, large scale IC devices, or design re–use. <LI>Incorporation of new materials (i.e. dual gate, multi–material active layers, etc.) in IC cell library and design of advanced transistor structures (i.e. Double Gate FDSOI, FinFET, etc.). <LI>Implementation of IC design and manufacturing process of new device structures (i.e. PDSOI, FDSOI, MRAM, etc.). <LI>Reduction of process & plasma induced damage or reduction of device/process parameter fluctuation through the optimization of circuit design & layout, device structure, manufacturing process, and semiconductor processing tool. </LI></B></B></SPAN>
Abbrevation
ICICDT
City
Minatec Grenoble
Country
France
Deadline Paper
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