<H2>Scope</H2> <DIV class=floatright>The aim of the conference is to present and discuss recent progress in crystal growth, characterization and control of material properties, as well as other basic research issues concerning silicon carbide (SiC) and other wide–bandgap semiconductors involving III–nitrides and diamond. The scope should cover but is not limited to theoretical and experimental investigations. </DIV> <P>New research results relevant to wafer production processes, device fabrication technologies and device applications will also be topics of the conference. The objective is to promote the development and commercialization of advanced devices and circuits used for energy saving, high voltage switching, high frequency, high power amplification and high temperature operation. </P> <P>The conference also serves as an international forum for the exchange of ideas on recent scientific and technical issues among researchers and engineers in industrial, academic and public sectors. </P><A name=topics></A> <H2>Topics</H2> <UL> <LI>Fundamentals (Theoretical and Experimental) <LI>SiC Bulk Growth <LI>SiC Epitaxial Growth <LI>New Materials Grown on SiC <LI>Material Characterization <LI>Defect Engineering <LI>Surfaces and Interfaces <LI>Device Fabrication Processes <LI>Devices (Power Switching Devices, RF Power Devices, High–Temperature Devices, Radiation–Resistant Devices, etc.) <LI>Device Physics (Measurement, Modeling, Simulation and Reliability) <LI>Packaging and Modular Technology <LI>Circuits and Applications </LI></UL>
Abbrevation
ICSCRM
City
Nürnberg
Country
Germany
Deadline Paper
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