<P><SPAN style=″FONT–SIZE: 10.5pt; FONT–FAMILY: ′Trebuchet MS′″><FONT size=3><FONT face=″Times New Roman″>EUROSOI Workshop is an international forum to promote interaction and exchanges between research groups and industrial partners involved in SOI activities all over the world. Following the lively experience of the previous meeting (Granada, 2005), EUROSOI’06 will include oral and poster sessions, outstanding key–note presentations, a training course, a rump session about strategic issues, a social program as well as room for informal discussions. EUROSOI covers recent progress in SOI technologies and will be of interest to materials and device scientists, as well as to process and applications oriented engineers. Original theoretical and experimental contributions are solicited. <?xml:namespace prefix = o ns = ″urn:schemas–microsoft–com:office:office″ /></FONT></FONT></SPAN></P> <P>Typical topics include:</P> <UL>(1) Synthesis of advanced SOI wafers (Ge, SiGe and strained layers, SOI heterostructures) <BR>(2) Materials evaluation, properties of ultra–thin films and buried oxides, defects and stress, interface quality <BR>(3) SOI MOSFETs: characterization, modeling and simulation of typical mechanisms, parameter extraction, reliability issues<BR>(4) High performance CMOS and bipolar devices: low power/voltage and RF circuits, memories, sensors and MEMS<BR>(5) Innovative devices: multiple–gates, tunneling transistors, etc.<BR></UL>
Abbrevation
EUROSOI2006
City
Grenoble
Country
France
Deadline Paper
Start Date
End Date
Abstract