11th International Conference on Solid State and Integrated Circuits Technology, Xian, China

Abbrevation

ICSICT

Link

http://www.icsict.com

City

Xian

Country

China

Deadline Paper

2012-06-30

Start Date

2012-10-29

End Date

2012-11-01

Abstract

The IEEE ICSICT–2012 conference is the 11th in the series aiming to provide an international forum for the presentation and discussion of recent advances in solid–state and integrated circuit technology. The conference will be held on Oct.29–Nov.1, 2012 in XiÃ¢â‚¬â„¢an, China. All aspects of solid–state devices, circuits, processing technologies, materials and other related research are within the scope of the conference. The three days of contributed and invited presentations on the latest developments in diverse fields given in oral and poster sessions, panel discussions on leading edge technology issues, and other activities will provide extensive opportunities for technical information exchange as well as a stimulating environment for mutual communication among participants. An exhibition of equipment and materials for solid state and integrated circuit technologies will be held concurrently with the conference. In addition, there will be discussions devoted to opportunities for cooperation and joint ventures in the microelectronics business in China. Excellent Student Paper Award will be presented at the closing of the conference. The Scope and Topics of the Conference Process & Device Technologies 1. Channel Engineering 2. High–k/Metal gate Technology 3. Advanced Source/Drain Technology 4. Interconnect Technology 5. Advanced 3D Integration 6. Novel Process Technologies 7. Ultra–Thin Body Transistors and Device Variability 8. Advanced High–k Metal Gate SoC and High Performance CMOS Platforms 9. CMOS Performance Enhancing and Novel Devices 10. Advanced FinFETs and Nanowire FETs 11. CNT, MTJ Devices and Nanowire Photodiodes 12. Low– Power and Steep Slope Switching Devices 13. Graphene Devices 14. Advanced Technologies for Ge MOSFETs 15. Organic semiconductor devices and technologies 16. Compound semiconductor devices and Technology 17. Ultra High Speed Transistors, HEMT/HBT etc. 18. Advanced Power Devices and Reliability 19. Flash Memory 20. IT Magnetic RAM 21. Resistive RAMs 22. Phase Change Memory 23. 3–Dimensional Memory 24. MEMS Technology 25. Thin Film Transistors 26. Biosensors 27. PV and Energy Harvesting 28. Front End of Line (FEOL) Reliability 29. Memory Reliability 30. Back–End of Line and ESD Reliability 31. High–Frequency and Multi–Gate Device & Modeling 32. Advanced Device Performance and Variation Modeling 33. Simulation of Memory Devices 34. Simulation of Non–Silicon Materials and Devices Circuits & ICCAD 35. Processors 36. Analog Circuits 37. SOC 38. PLL and CDR 39. Low–Power Nyquist ADCs 40. Digital Circuits Resilient 41. High–Resolution and High Speed Data Converters 42. Digital Chip–to–Chip and On–Die Interfaces 43. Advanced Clock Generation 44. Clocking Building Blocks 45. High Speed On–Die Network Processor Clocking 46. Advanced SRAM & DRAM Circuits, Embbeded Memorres 47. Nonvolatile Memories Circuits 48. Advanced Transceivers Techniques 49. RF and New Wireless Transceivers 50. RF Circuits and Systems 51. Interference Robust RF Receivers 52. Signal Processing for Wireless 53. System–Level Modeling & Simulation/Verification 54. System–Level Synthesis & Optimization 55. High–Level/Behavioral/Logic Synthesis & Optimization 56. Physical Design 57. DFM